Name: Long Channel DG MOSFET Modeling: A Carrier Based Approach (en Inglés)
Price: 994.45 MXN
Availability: InStock
Author: Singh, Ajay Kumar
ISBN: 9786200101297

Envío gratis

portada Long Channel DG MOSFET Modeling: A Carrier Based Approach (en Inglés)

Formato

Libro Físico

Autor

Ajay Kumar Singh

Editorial

LAP Lambert Academic Publishing

Idioma

Inglés

N° páginas

Encuadernación

Tapa Blanda

Dimensiones

22.9 x 15.2 x 0.3 cm

Peso

0.09 kg.

ISBN13

9786200101297

Categorías

Tecnología: cuestiones generales

Long Channel DG MOSFET Modeling: A Carrier Based Approach (en Inglés)

Ajay Kumar Singh (Autor) · LAP Lambert Academic Publishing · Tapa Blanda

Libro Nuevo

$ 994.45

$ 1,808.10

Ahorras: $ 813.64

45% descuento

Envío normal

Origen: Estados Unidos (Costos de importación incluídos en el precio)

Se enviará desde nuestra bodega entre el Lunes 22 de Julio y el Viernes 02 de Agosto.

Lo recibirás en cualquier lugar de México entre 1 y 3 días hábiles luego del envío.

Reseña del libro "Long Channel DG MOSFET Modeling: A Carrier Based Approach (en Inglés)"

The rapid advancement of microelectronics has relied on miniaturization of transistors which increases the package density. The increase in package density results in increased complexities of the IC design. Designing such complex integrated circuits without computer-aided (CAD) tool is impossible. CAD tools help in predicting the performance and electrical behavior of the ICs correctly prior to fabrication/manufacturing and saves millions of dollars. The accuracy of the CAD tools depends upon the accuracy of the models used. These are regarded as the basic requirements for the analysis and design of ICs and should be compact. In order to overcome device physics and SCEs limitations, researches have been carried out for last two decades in the direction of alternative device materials and device architectures. This book focuses on the carrier based approach to develop the compact model of long channel undoped DG MOSFET to provide an insight of the electrical/physical behavior. This method avoids the difficulties in calculating the surface and centric potential as long as the carrier concentrations at the boundaries are known.