Name: Wide Bandgap Semiconductors: Fundamental Properties and Modern Photonic and Electronic Devices (en Inglés)
SKU: 62117542
Price: 3977.98 MXN
Availability: InStock
Author: Takahashi Kiyoshi,Yoshikawa Akihiko,Sandhu Adarsh
ISBN: 9783540472346

portada Wide Bandgap Semiconductors: Fundamental Properties and Modern Photonic and Electronic Devices (en Inglés)

Wide Bandgap Semiconductors: Fundamental Properties and Modern Photonic and Electronic Devices (en Inglés)

Formato

Libro Físico

Editorial

Springer

Autor

Takahashi Kiyoshi,Yoshikawa Akihiko,Sandhu Adarsh

Idioma

Inglés

N° páginas

485

Encuadernación

Tapa Dura

ISBN13

9783540472346

N° edición

2007th

Wide Bandgap Semiconductors: Fundamental Properties and Modern Photonic and Electronic Devices (en Inglés)

Takahashi Kiyoshi,Yoshikawa Akihiko,Sandhu Adarsh (Autor) · Springer · Tapa Dura

Libro Nuevo Importado

Envío: 14 a 19 días háb.

$ 7,232.69$ 3,977.98

-45%

Costos de importación incluídos en el precio ✅

Libro Nuevo

Quedan más de 100 unidades

$ 3,977.98

¡Envío Gratis! Llega entre el 28 Sep y el 06 Oct a CUAUHTÉMOC, Ciudad de México. Seleccionar ubicación

Agregar a lista de deseos

Reseña del libro "Wide Bandgap Semiconductors: Fundamental Properties and Modern Photonic and Electronic Devices (en Inglés)"

The p-n junction was invented in the ?rst half of the twentieth century and the latter half saw the birth of light emitting diodes: red and yellow/green in the 1960s and yellow in the 1970s. However, theoretical predictions of the improbabilityofsynthesizingp-typewidebandgapsemiconductorscastalong shadow over hopes for devices emitting in the elusive blue part of the elect- magnetic spectrum, which would complete, with red and green, the quest for the primary colors making up white light. At a time when many researchers abandoned their e?orts on nitrides, Professor Isamu Akasaki of Nagoya U- versity at this time remained committed to his belief that "synthesis of high quality GaN crystals would eventually enable p-type doping" and in 1989 he succeeded in fabricating the world's ?rst GaN p-n junction light emitting diode. Professor Isamu Akasaki kindly accepted our invitation to contribute to this book and describes his journey 'from the nitride wilderness' to the ?rst experimental results of blue emission from GaN p-n junctions: Japan's major contribution to the development of wide bandgap semiconductor devices. The discovery of blue emission from GaN p-n junctions in 1989 was the major technological turning point during the development of wide bandgap emission devices with wide reaching scienti?c, industrial and social impli- tions.