Name: Electrical Properties of n-GaN based MOS type Schottky Junctions (en Inglés)
SKU: 57792201
Price: 1391.61 MXN
Availability: InStock
Author: Prasad, Chowdam Venkata ; Reddy, Prof Varra Rajagopal
ISBN: 9786203202168

portada Electrical Properties of n-GaN based MOS type Schottky Junctions (en Inglés)

Electrical Properties of n-GaN based MOS type Schottky Junctions (en Inglés)

Formato

Libro Físico

Autor

Chowdam Venkata Prasad

Prof Varra Rajagopal Reddy

Editorial

LAP Lambert Academic Publishing

Idioma

Inglés

N° páginas

152

Encuadernación

Tapa Blanda

Dimensiones

22.9x15.2x0.9 cm

Peso

0.23 kg.

ISBN13

9786203202168

Categorías

Ingeniería electrónica

Electrical Properties of n-GaN based MOS type Schottky Junctions (en Inglés)

Chowdam Venkata Prasad (Autor) · Prof Varra Rajagopal Reddy (Autor) · LAP Lambert Academic Publishing · Tapa Blanda

Libro Nuevo Importado

Envío: 22 a 27 días háb.

$ 2,319.36$ 1,391.61

-40%

Costos de importación incluídos en el precio ✅

Libro Nuevo

Quedan 10 unidades

$ 1,391.61

¡Envío Gratis! Llega entre el 09 Oct y el 19 Oct a CUAUHTÉMOC, Ciudad de México. Seleccionar ubicación

Agregar a lista de deseos

Reseña del libro "Electrical Properties of n-GaN based MOS type Schottky Junctions (en Inglés)"

III-nitride semiconductor materials, specially gallium nitride (GaN), have attracted significantly in the fabrication of high power, high frequency and high temperature devices such as metal/oxide/semiconductor field effect transistors (MOSFETS), heterojunction field effect transistors (HFET's) and high electron mobility transistors (HEMT's). However, metal/semiconductor (MS) junctions in these devices may suffer from high leakage-current and low break-down voltage, which limits the device performance, reliability and stability. This could restrain by employing a thin insulator/interlayer between the metal and semiconductor. The formation of high-quality Schottky junctions with low-leakage current and low ideality factor by insertion of a thin insulator/interlayer in the middle of the metal and semiconductor is challenging task. Hence, the detailed investigations are prerequisite on the formation of a thin insulator/interlayer in the middle of the metal and semiconductor to achieve high barrier height with low ideality factor and good thermal stability.