Name: Characterization Methods for Submicron Mosfets (en Inglés)
SKU: 58123616
Price: 2264.77 MXN
Availability: InStock
Author: Haddara, Hisham
ISBN: 9781461285847

portada Characterization Methods for Submicron Mosfets (en Inglés)

Characterization Methods for Submicron Mosfets (en Inglés)

Formato

Libro Físico

Editorial

Springer

Autor

Haddara, Hisham

Idioma

Inglés

N° páginas

232

Encuadernación

Tapa Blanda

Dimensiones

23.4x15.6x1.3 cm

Peso

0.36 kg.

ISBN13

9781461285847

Categorías

Ingeniería eléctrica
Dispositivos y materiales electrónicos

Characterization Methods for Submicron Mosfets (en Inglés)

Haddara, Hisham (Autor) · Springer · Tapa Blanda

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Reseña del libro "Characterization Methods for Submicron Mosfets (en Inglés)"

It is true that the Metal-Oxide-Semiconductor Field-Eeffect Transistor (MOSFET) is a key component in modern microelectronics. It is also true that there is a lack of comprehensive books on MOSFET characterization in gen- eral. However there is more than that as to the motivation and reasons behind writing this book. During the last decade, device physicists, researchers and engineers have been continuously faced with new elements which made the task of MOSFET characterization more and more crucial as well as difficult. The progressive miniaturization of devices has caused several phenomena to emerge and modify the performance of scaled-down MOSFETs. Localized degradation induced by hot carrier injection and Random Telegraph Signal (RTS) noise generated by individual traps are examples of these phenomena. Therefore, it was inevitable to develop new models and new characterization methods or at least adapt the existing ones to cope with the special nature of these new phenomena. The need for more deep and extensive characterization of MOSFET param- eters has further increased as the applications of this device have gained ground in many new fields in which its performance has become more and more sensi- tive to the properties of its Si - Si0 interface. MOS transistors have crossed 2 the borders of high speed electronics where they operate at GHz frequencies. Moreover, MOSFETs are now widely employed in the subthreshold regime in neural circuits and biomedical applications.